3 edition of Semiconductor-on-insulator and thin film transistor technology found in the catalog.
Includes bibliographies and indexes.
|Statement||editors, A. Chiang, M.W. Geis, L. Pfeiffer.|
|Series||Materials Research Society symposia proceedings,, v. 53|
|Contributions||Chiang, A., Geis, M. W., Pfeiffer, L.|
|LC Classifications||TK7871.85 .S4667 1986|
|The Physical Object|
|Pagination||xvii, 474 p. :|
|Number of Pages||474|
|ISBN 10||0931837189, 0931837367|
|LC Control Number||86018123|
Books. Y. Cheng and C. Hu, MOSFET Modeling & BSIM3 User's Guide, Boston, MA: Kluwer Academic Publishers,  C. Hu, Ed., Nonvolatile Semiconductor Memories. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years .
for thin-film transistor applications", Proc. 20th Insulating Films Semicond. (INFOS), Potsdam, Germany () [also published as a journal article c91]. Search for research output in CityU through CityU Scholars. In: Proceedings of the 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics”, , p. paper
Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same Issued January 1, United States 8,, Other inventorsTitle: Semiconductor Technologist. . Description: DN is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance. T. I. Kamins, S. Sharma, and M. S. Islam, “Self-assembled semiconductor nanowires on silicon and insulating substrates: experimental behavior” Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, D. Flandre, et al. (Eds), Kluwer cademic Publisher: Netherlands, pp. ,
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SyntaxTextGen not activatedA pdf device having a semiconductor element (a thin film transistor, pdf thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device.
In the present invention, the element is not formed .In: D. Flandre, A.N. Nazarov, P.L.F. Hemment, Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publishers: Oxford (UK)p.
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Semiconductor-On-Insulator and Thin Film Transistor Technology Proceedings. Mies Van Der Rohe Crown Hall. Feature Film: A Book by Douglas Gordon - Douglas Gordon - Paperback. Starting Over.