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Friday, May 1, 2020 | History

3 edition of Semiconductor-on-insulator and thin film transistor technology found in the catalog.

Semiconductor-on-insulator and thin film transistor technology

symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.

  • 273 Want to read
  • 14 Currently reading

Published by Materials Research Society in Pittsburgh, Pa .
Written in English

    Subjects:
  • Semiconductors -- Congresses.,
  • Thin film devices -- Congresses.,
  • Integrated circuits -- Congresses.

  • Edition Notes

    Includes bibliographies and indexes.

    Statementeditors, A. Chiang, M.W. Geis, L. Pfeiffer.
    SeriesMaterials Research Society symposia proceedings,, v. 53
    ContributionsChiang, A., Geis, M. W., Pfeiffer, L.
    Classifications
    LC ClassificationsTK7871.85 .S4667 1986
    The Physical Object
    Paginationxvii, 474 p. :
    Number of Pages474
    ID Numbers
    Open LibraryOL2724449M
    ISBN 100931837189, 0931837367
    LC Control Number86018123

    Books. Y. Cheng and C. Hu, MOSFET Modeling & BSIM3 User's Guide, Boston, MA: Kluwer Academic Publishers, [] C. Hu, Ed., Nonvolatile Semiconductor Memories. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years .

    for thin-film transistor applications", Proc. 20th Insulating Films Semicond. (INFOS), Potsdam, Germany () [also published as a journal article c91]. Search for research output in CityU through CityU Scholars. In: Proceedings of the 6th International SemOI Conference and 1st Ukrainian-French Seminar “Semiconductor-on-Insulator materials, devices and circuits: physics, technology and diagnostics”, , p. paper

    Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same Issued January 1, United States 8,, Other inventorsTitle: Semiconductor Technologist. . Description: DN is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance. T. I. Kamins, S. Sharma, and M. S. Islam, “Self-assembled semiconductor nanowires on silicon and insulating substrates: experimental behavior” Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, D. Flandre, et al. (Eds), Kluwer cademic Publisher: Netherlands, pp. ,


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Semiconductor-on-insulator and thin film transistor technology Download PDF EPUB FB2

SyntaxTextGen not activatedA pdf device having a semiconductor element (a thin film transistor, pdf thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device.

In the present invention, the element is not formed .In: D. Flandre, A.N. Nazarov, P.L.F. Hemment, Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publishers: Oxford (UK)p.

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